PDTC123EEF,115 belongs to the category of semiconductor devices.
The specifications of PDTC123EEF,115 include: - Maximum Collector-Base Voltage: 50V - Maximum Collector Current: 100mA - Total Power Dissipation: 200mW - Transition Frequency: 250MHz
The detailed pin configuration of PDTC123EEF,115 includes: - Base (B) - Emitter (E) - Collector (C)
Advantages: - Suitable for high-speed switching applications - Small package size - Low power consumption
Disadvantages: - Limited maximum collector current - Restricted voltage capability
PDTC123EEF,115 operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals, allowing for signal amplification and switching.
This product is commonly used in various electronic applications such as: - Switching circuits - Amplifier circuits - Oscillator circuits
Some alternative models to PDTC123EEF,115 include: - BC847B,215 - BC846B,215 - BC856B,215
This comprehensive range of products provides options with similar characteristics and functionalities.
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What is PDTC123EEF,115?
What are the key specifications of PDTC123EEF,115?
How is PDTC123EEF,115 typically used in technical solutions?
Can PDTC123EEF,115 be used in high-temperature environments?
What are the recommended soldering techniques for PDTC123EEF,115?
Does PDTC123EEF,115 have any specific storage requirements?
Are there any known reliability issues with PDTC123EEF,115?
Can PDTC123EEF,115 be used in automotive applications?
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