PHB193NQ06T,118

Product Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High power handling capacity, low on-resistance, fast switching speed
• Package: TO-263
• Essence: Efficient power management
• Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

• Voltage Rating: 60V
• Current Rating: 193A
• RDS(ON): 1.7mΩ
• Gate Charge (Qg): 110nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The PHB193NQ06T,118 follows the standard pin configuration for a TO-263 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Low on-resistance for minimal power dissipation
• Fast switching speed for improved efficiency
• High current handling capability for robust performance

Advantages

• High power handling capacity
• Low on-resistance
• Fast switching speed

Disadvantages

• Higher gate charge compared to some alternative models
• Limited voltage rating compared to some high-voltage MOSFETs

Working Principles

The PHB193NQ06T,118 operates based on the principle of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow in various applications.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of power switching applications, including but not limited to: - Motor control - Power supplies - Inverters - DC-DC converters

Detailed and Complete Alternative Models

• PHB200NQ06T,118: Similar specifications with higher voltage rating
• PHB180NQ06T,118: Lower on-resistance with slightly lower current rating

In conclusion, the PHB193NQ06T,118 Power MOSFET offers high power handling capacity, low on-resistance, and fast switching speed, making it an ideal choice for various power switching applications.

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