2SC5551AF-TD-E

Product Overview

Category

The 2SC5551AF-TD-E belongs to the category of semiconductor devices.

Use

This product is commonly used in electronic circuits for amplification and switching applications.

Characteristics

• High voltage capability
• Low saturation voltage
• High current gain

Package

The 2SC5551AF-TD-E is typically available in a TO-220F package.

Essence

This product is essential for designing and building electronic circuits that require high voltage amplification and switching capabilities.

Packaging/Quantity

The 2SC5551AF-TD-E is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Collector-Base Voltage (VCBO): 160V
• Collector-Emitter Voltage (VCEO): 160V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 0.6A
• Power Dissipation (PD): 1.5W
• Transition Frequency (fT): 150MHz
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The 2SC5551AF-TD-E has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

• High voltage capability allows for use in various electronic applications.
• Low saturation voltage ensures efficient operation in switching circuits.
• High current gain enables effective signal amplification.

Advantages and Disadvantages

Advantages

• High voltage capability
• Low saturation voltage
• High current gain

Disadvantages

• Limited collector current compared to other transistors in the same category
• Relatively lower transition frequency

Working Principles

The 2SC5551AF-TD-E operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

This transistor is widely used in audio amplifiers, power supply circuits, and electronic switches due to its high voltage capability and low saturation voltage.

Detailed and Complete Alternative Models

Some alternative models to the 2SC5551AF-TD-E include: - 2N5551 - BC557 - MPSA42

In conclusion, the 2SC5551AF-TD-E is a versatile semiconductor device with high voltage capability and low saturation voltage, making it suitable for various electronic applications such as amplification and switching circuits.

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