The 2SC6096-TD-E belongs to the category of semiconductor devices, specifically a high-frequency transistor.
The 2SC6096-TD-E has three pins: the collector (C), base (B), and emitter (E). The pin configuration is as follows: - Collector (C) - Pin 1 - Base (B) - Pin 2 - Emitter (E) - Pin 3
Advantages: - High gain at high frequencies - Low noise figure - Compact TO-126 package
Disadvantages: - Limited maximum collector current - Restricted power dissipation capability
The 2SC6096-TD-E operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify high-frequency signals.
The 2SC6096-TD-E finds extensive use in various high-frequency applications, including: - Radio frequency amplifiers - Oscillator circuits - Communication systems
Some alternative models to the 2SC6096-TD-E include: - 2SC3357 - 2SC3320 - 2SC2782
This comprehensive entry provides an in-depth understanding of the 2SC6096-TD-E, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
What is the maximum collector current of 2SC6096-TD-E?
What is the maximum collector-emitter voltage of 2SC6096-TD-E?
What is the typical hFE (DC current gain) of 2SC6096-TD-E?
What are the typical applications for 2SC6096-TD-E?
What is the power dissipation of 2SC6096-TD-E?
Is 2SC6096-TD-E suitable for audio amplifier designs?
Does 2SC6096-TD-E require a heat sink for operation?
What is the operating temperature range of 2SC6096-TD-E?
Can 2SC6096-TD-E be used in flyback converter circuits?
Are there any recommended complementary transistors to use with 2SC6096-TD-E?