FGPF7N60RUFDTU

Product Overview

• Category: Power semiconductor
• Use: Switching power supply, motor control, and other high voltage applications
• Characteristics: High voltage capability, low on-state resistance, fast switching speed
• Package: TO-220F
• Essence: Field-effect transistor (FET)
• Packaging/Quantity: Available in reels or tubes, quantity varies by manufacturer

Specifications

• Voltage Rating: 600V
• Current Rating: 7A
• On-State Resistance: 1.8Ω
• Gate Charge: 22nC
• Operating Temperature: -55°C to 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220F

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source

Functional Features

• Fast switching speed for efficient power conversion
• Low on-state resistance for reduced power loss
• High voltage capability for versatile applications

Advantages and Disadvantages

Advantages

• Efficient power conversion
• Reduced power loss
• Versatile applications

Disadvantages

• Sensitive to overvoltage conditions
• Requires careful handling during installation

Working Principles

The FGPF7N60RUFDTU operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of a channel.

Detailed Application Field Plans

The FGPF7N60RUFDTU is suitable for various high voltage applications including: - Switching power supplies - Motor control systems - Inverters - UPS (Uninterruptible Power Supplies)

Detailed and Complete Alternative Models

• FGPF7N60RUF: Similar specifications and characteristics
• IRFP460: Comparable power MOSFET with slightly different package and ratings
• STW7NK80Z: Alternative FET with similar voltage and current ratings

This comprehensive entry provides detailed information about the FGPF7N60RUFDTU, covering its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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