J112_D11Z Product Overview

Introduction

The J112_D11Z is a versatile electronic component that belongs to the category of field-effect transistors (FETs). This entry provides an in-depth overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Field-Effect Transistor (FET)
• Use: The J112_D11Z is commonly used as a switch or amplifier in various electronic circuits.
• Characteristics: It exhibits high input impedance, low output impedance, and low power consumption.
• Package: The J112_D11Z is typically available in TO-92 packaging.
• Essence: It is designed to provide efficient signal amplification and switching capabilities.
• Packaging/Quantity: The product is usually sold in reels or trays containing multiple units.

Specifications

• Type: N-channel FET
• Maximum Drain-Source Voltage: 35V
• Maximum Gate-Source Voltage: ±20V
• Continuous Drain Current: 50mA
• Power Dissipation: 350mW
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The J112_D11Z features three pins: Gate (G), Drain (D), and Source (S). The pinout configuration is as follows: - Gate (G): Input terminal for controlling the flow of current through the transistor. - Drain (D): Output terminal where the current exits the transistor. - Source (S): Terminal through which the current enters the transistor.

Functional Features

• High input impedance allows for minimal loading of preceding stages.
• Low output impedance enables efficient driving of subsequent circuit components.
• Suitable for use in low-power applications due to its low power consumption.

Advantages and Disadvantages

Advantages

• High input impedance enhances circuit performance.
• Low power consumption contributes to energy efficiency.
• Versatile applications in signal amplification and switching.

Disadvantages

• Limited maximum drain-source voltage may restrict use in high-voltage applications.
• Moderate continuous drain current may not be suitable for high-power circuits.

Working Principles

The J112_D11Z operates based on the principle of field-effect modulation, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal. By modulating the gate-source voltage, the conductivity of the channel between the drain and source can be varied, allowing for signal amplification or switching.

Detailed Application Field Plans

The J112_D11Z finds extensive use in various electronic applications, including: - Audio amplifiers - Signal switching circuits - Low-power voltage regulators - Oscillator circuits - Sensor interfaces

Detailed and Complete Alternative Models

Several alternative models with similar characteristics and functionalities to the J112_D11Z include: - 2N7000 - BS170 - J175 - J176 - J177

In conclusion, the J112_D11Z offers valuable functionality as a field-effect transistor, providing high input impedance, low power consumption, and versatile applications in electronic circuits.

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