J112RL1G Product Overview

Introduction

The J112RL1G is a semiconductor component belonging to the category of field-effect transistors (FETs). This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the J112RL1G.

Basic Information Overview

• Category: Field-Effect Transistor (FET)
• Use: Amplification and switching of electronic signals
• Characteristics: High input impedance, low output impedance, voltage-controlled operation
• Package: TO-92
• Essence: Silicon-based semiconductor
• Packaging/Quantity: Available in reels or tubes with varying quantities

Specifications

• Type: N-channel
• Maximum Drain-Source Voltage (V_DSS): 35V
• Maximum Gate-Source Voltage (V_GSS): ±20V
• Maximum Continuous Drain Current (I_D): 50mA
• Maximum Power Dissipation (P_D): 350mW
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The J112RL1G has three pins: 1. Gate (G): Controls the conductivity between the source and drain terminals. 2. Drain (D): Connects to the positive supply voltage. 3. Source (S): Connects to the ground or common reference point.

Functional Features

• High input impedance allows for minimal loading of preceding circuitry.
• Low output impedance enables efficient signal transmission to subsequent stages.
• Voltage-controlled operation facilitates precise signal manipulation.

Advantages and Disadvantages

Advantages

• High input impedance minimizes signal distortion.
• Low output impedance ensures effective signal transfer.
• Voltage-controlled operation offers precise signal control.

Disadvantages

• Susceptible to electrostatic discharge (ESD) damage.
• Limited maximum drain-source voltage may restrict certain applications.

Working Principles

The J112RL1G operates based on the principle of field-effect modulation, where the conductivity between the source and drain terminals is controlled by the voltage applied to the gate terminal. This voltage-induced modulation allows for amplification and switching of electronic signals.

Detailed Application Field Plans

The J112RL1G finds extensive use in various electronic applications, including but not limited to: - Audio amplifiers - Signal processing circuits - Switching circuits - Oscillator circuits - Sensor interfaces

Detailed and Complete Alternative Models

Some alternative models to the J112RL1G include: - J113RL1G - J111RL1G - J175RL1G - J176RL1G

In conclusion, the J112RL1G is a versatile FET with high input impedance, low output impedance, and voltage-controlled operation, making it suitable for a wide range of electronic applications.

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