ON Semiconductor
Зображення може бути репрезентативним.
Деталі продукту див. у специфікаціях.
MJD127G
Переглянути деталі Таблиці даних

MJD127G

Introduction

The MJD127G is a power transistor belonging to the category of discrete semiconductors. This device is commonly used in electronic circuits for amplification and switching applications due to its high voltage and current capabilities.

Basic Information Overview

  • Category: Discrete Semiconductors
  • Use: Amplification and Switching
  • Characteristics: High voltage and current capabilities
  • Package: TO-252 (DPAK)
  • Essence: Power Transistor
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 100V
  • Current Rating: 8A
  • Power Dissipation: 2W
  • Gain (hFE): 25 to 250
  • Frequency: Up to 100MHz

Detailed Pin Configuration

The MJD127G follows the standard pin configuration for a TO-252 package: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High Voltage Capability: The MJD127G can withstand relatively high voltages, making it suitable for various power applications.
  • High Current Gain: With a wide range of current gain, this transistor provides flexibility in circuit design.
  • Low Saturation Voltage: This feature ensures minimal power loss during switching operations.

Advantages and Disadvantages

Advantages

  • High voltage and current ratings
  • Wide range of current gain
  • Low saturation voltage

Disadvantages

  • Relatively limited frequency capability compared to specialized RF transistors
  • Larger package size compared to SMD alternatives

Working Principles

The MJD127G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between the collector and emitter terminals through the base terminal.

Detailed Application Field Plans

The MJD127G finds extensive use in various applications, including: - Power Supplies - Motor Control - Audio Amplifiers - LED Drivers - Switching Circuits

Detailed and Complete Alternative Models

Some alternative models to the MJD127G include: - TIP127 - 2N3055 - MJL3281A - BD139

In conclusion, the MJD127G power transistor offers high voltage and current capabilities, making it suitable for a wide range of amplification and switching applications. Its robust characteristics and functional features make it a valuable component in electronic circuit design.

[Word Count: 314]

Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням MJD127G у технічних рішеннях

  1. What is the MJD127G transistor used for?

    • The MJD127G is a high voltage, high current Darlington transistor commonly used in power switching applications.

  2. What are the key features of the MJD127G transistor?

    • The MJD127G features a high DC current gain, low collector-emitter saturation voltage, and high transition frequency, making it suitable for power management applications.

  3. What are the typical applications of the MJD127G transistor?

    • Typical applications include power management in industrial and consumer electronics, motor control, and general purpose amplification.

  4. What is the maximum collector current rating of the MJD127G transistor?

    • The MJD127G has a maximum collector current rating of 8 amperes.

  5. What is the maximum collector-emitter voltage rating of the MJD127G transistor?

    • The MJD127G has a maximum collector-emitter voltage rating of 100 volts.

  6. What is the thermal resistance of the MJD127G transistor?

    • The thermal resistance of the MJD127G is typically around 62°C/W.

  7. What are the recommended operating conditions for the MJD127G transistor?

    • The MJD127G is typically operated within a temperature range of -55°C to 150°C and with a maximum power dissipation of 2 watts.

  8. Can the MJD127G be used for driving inductive loads?

    • Yes, the MJD127G is suitable for driving inductive loads such as motors and solenoids due to its high current and voltage ratings.

  9. Does the MJD127G require external protection diodes when driving inductive loads?

    • Yes, it is recommended to use external freewheeling diodes to protect the MJD127G from voltage spikes generated by inductive loads.

  10. Are there any specific layout considerations when using the MJD127G in a circuit?

    • It is important to minimize the length of high-current traces and provide adequate heat sinking to ensure proper performance and reliability of the MJD127G in a circuit.