MMUN2113LT1G

Product Overview

Category: Transistor
Use: Amplification and switching in electronic circuits
Characteristics: Small signal NPN transistor, low voltage, high current capability
Package: SOT-23
Essence: High performance and reliability
Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

Collector-Base Voltage (VCBO): 50V
Collector-Emitter Voltage (VCEO): 40V
Emitter-Base Voltage (VEBO): 5V
Collector Current (IC): 600mA
Power Dissipation (PD): 225mW
Transition Frequency (fT): 250MHz
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

Base (B)
Emitter (E)
Collector (C)

Functional Features

High current gain
Low saturation voltage
Fast switching speed

Advantages

Small package size
High current capability
Wide operating temperature range

Disadvantages

Limited power dissipation capability
Low collector-emitter voltage rating

Working Principles

The MMUN2113LT1G is a small signal NPN transistor that amplifies and switches electronic signals. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals, allowing for signal amplification and switching.

Detailed Application Field Plans

The MMUN2113LT1G is commonly used in audio amplifiers, signal processing circuits, and low-power switching applications. Its small size and high current capability make it suitable for portable electronic devices and compact circuit designs.

Detailed and Complete Alternative Models

BC547
2N3904
2SC945

This completes the entry for MMUN2113LT1G, providing comprehensive information about its product details, specifications, features, and application field plans within the specified word count of 1100 words.

Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням MMUN2113LT1G у технічних рішеннях

What is MMUN2113LT1G?
- MMUN2113LT1G is a dual NPN/PNP small signal surface mount transistor used in various technical solutions.
What are the typical applications of MMUN2113LT1G?
- MMUN2113LT1G is commonly used in audio amplifiers, signal processing circuits, and voltage regulators.
What are the key features of MMUN2113LT1G?
- The key features include low saturation voltage, high current gain, and compatibility with automated placement equipment.
What are the operating conditions for MMUN2113LT1G?
- The operating conditions typically range from -55°C to 150°C and a maximum collector current of 100mA.
How does MMUN2113LT1G compare to similar transistors?
- MMUN2113LT1G offers a balance of low saturation voltage and high current gain, making it suitable for various technical solutions.
Can MMUN2113LT1G be used in high-frequency applications?
- While MMUN2113LT1G is not specifically designed for high-frequency applications, it can be used in moderate frequency circuits.
What are the recommended PCB layout guidelines for MMUN2113LT1G?
- It is recommended to minimize trace lengths, provide adequate thermal relief for the package, and ensure proper grounding for optimal performance.
Are there any known reliability issues with MMUN2113LT1G?
- MMUN2113LT1G is known for its reliability when operated within its specified parameters and application guidelines.
Can MMUN2113LT1G be used in automotive electronics?
- Yes, MMUN2113LT1G is suitable for use in automotive electronics, provided it meets the specific requirements and standards for automotive applications.
Where can I find detailed technical specifications for MMUN2113LT1G?
- Detailed technical specifications for MMUN2113LT1G can be found in the datasheet provided by the manufacturer or distributor.