NSVMMBT6517LT1G

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: Small size, high efficiency, low power consumption
Package: SOT-23
Essence: NPN Bipolar Junction Transistor
Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Collector-Emitter Voltage (VCEO): 40V
• Collector Current (IC): 600mA
• Power Dissipation (Pd): 225mW
• DC Current Gain (hFE): 100 - 300
• Transition Frequency (fT): 250MHz

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High current gain
• Low saturation voltage
• Fast switching speed

Advantages and Disadvantages

Advantages: - Small package size - Suitable for high-speed switching applications - Low power consumption

Disadvantages: - Limited maximum voltage and current ratings - Sensitivity to temperature variations

Working Principles

The NSVMMBT6517LT1G operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small signal at the base terminal, allowing for amplification and switching of electronic signals.

Detailed Application Field Plans

The NSVMMBT6517LT1G is commonly used in: - Audio amplifiers - Switching circuits - Signal amplification in electronic devices

Detailed and Complete Alternative Models

1. 2N3904: Similar characteristics and package type
2. BC547: Comparable specifications and pin configuration
3. MMBT2222A: Alternative with higher current rating and similar package

Note: The alternative models listed above are provided as potential substitutes based on similar characteristics and intended usage.

This comprehensive entry provides an in-depth understanding of the NSVMMBT6517LT1G, covering its basic information, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.