BR25H010FJ-2CE2

Product Overview

Category: Integrated Circuit (IC)

Use: Non-volatile Memory

Characteristics: - High-speed read and write operations - Low power consumption - Wide operating voltage range - Small package size - High reliability

Package: SOP-8 (Small Outline Package)

Essence: The BR25H010FJ-2CE2 is a non-volatile memory IC that provides high-speed read and write operations with low power consumption. It is commonly used in various electronic devices for data storage purposes.

Packaging/Quantity: The BR25H010FJ-2CE2 is typically packaged in reels, with 2,000 pieces per reel.

Specifications

• Memory Capacity: 1 Kbit (128 bytes)
• Operating Voltage Range: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Endurance: 1 million cycles
• Data Retention: 100 years

Detailed Pin Configuration

The BR25H010FJ-2CE2 has a total of 8 pins arranged as follows:

┌───┬───┐ │ 1 │ 2 │ ├───┼───┤ │ 3 │ 4 │ ├───┼───┤ │ 5 │ 6 │ ├───┼───┤ │ 7 │ 8 │ └───┴───┘

1. Chip Enable (CE): Enables the device when set to a low logic level.
2. Serial Clock (SCK): Provides the clock signal for data transfer.
3. Serial Data Input (SI): Receives data serially for programming or reading.
4. Serial Data Output (SO): Outputs data serially during read operations.
5. Write Protect (WP): Enables or disables write protection of the memory array.
6. Ground (GND): Ground reference for the IC.
7. Power Supply (VCC): Positive power supply voltage.
8. Chip Select (CS): Selects the device when set to a low logic level.

Functional Features

• High-speed Read and Write Operations: The BR25H010FJ-2CE2 offers fast data access, allowing for efficient read and write operations.
• Low Power Consumption: This IC is designed to minimize power consumption, making it suitable for battery-powered devices.
• Wide Operating Voltage Range: With an operating voltage range of 1.7V to 5.5V, the BR25H010FJ-2CE2 can be used in various electronic systems.
• Small Package Size: The SOP-8 package ensures a compact form factor, saving valuable board space.
• High Reliability: The BR25H010FJ-2CE2 provides reliable data storage with a long write endurance and data retention period.

Advantages and Disadvantages

Advantages: - Fast read and write operations - Low power consumption - Wide operating voltage range - Compact package size - High reliability

Disadvantages: - Limited memory capacity (1 Kbit)

Working Principles

The BR25H010FJ-2CE2 utilizes a combination of floating gate and tunnel oxide technologies to achieve non-volatile memory functionality. It stores data by trapping charges in the floating gate, which can be electrically programmed or erased. During read operations, the stored charges are sensed to determine the stored data.

Detailed Application Field Plans

The BR25H010FJ-2CE2 is widely used in various electronic devices and systems, including but not limited to: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive applications (e.g., infotainment systems, engine control units) - Industrial equipment (e.g., measurement devices, control systems) - Medical devices (e.g., patient monitoring systems, diagnostic equipment) - Communication devices (e.g., routers, modems)

Detailed and Complete Alternative Models

1. BR25H010FJ-3CE2: Similar to the BR25H010FJ-2CE2, but with extended operating temperature range (-40°C to +105°C).
2. BR25H010FJ-4CE2: Similar to the BR25H010FJ-2CE2, but with increased memory capacity (4 Kbit).

These alternative models offer similar functionality with slight variations in specifications to cater to different application requirements.

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