DTA113ZETL

Product Category: Transistor

Basic Information Overview: - Category: NPN Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: Small signal, low power, high voltage, and high current capability - Package: SOT-23, SMD (Surface Mount Device) - Essence: Small form factor, suitable for compact electronic devices - Packaging/Quantity: Typically available in reels of 3000 units

Specifications: - Maximum Collector-Base Voltage (Vcb): 50V - Maximum Collector Current (Ic): 100mA - DC Current Gain (hFE): 100 - 400 - Transition Frequency (fT): 250MHz - Power Dissipation (Pd): 225mW

Detailed Pin Configuration: - Pin 1 (Emitter): Connects to the emitter region of the transistor - Pin 2 (Base): Connects to the base region of the transistor - Pin 3 (Collector): Connects to the collector region of the transistor

Functional Features: - High current gain and low saturation voltage - Fast switching speed - Low noise and distortion

Advantages: - Small package size - Suitable for high-frequency applications - Low power consumption

Disadvantages: - Limited maximum voltage and current ratings - Sensitivity to temperature variations

Working Principles: The DTA113ZETL operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.

Detailed Application Field Plans: - Audio amplifiers - Signal processing circuits - Switching circuits in portable electronic devices

Detailed and Complete Alternative Models: - BC547B - 2N3904 - 2SC945

This comprehensive entry provides a detailed understanding of the DTA113ZETL, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

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