M48Z02-150PC1

Product Overview

Category

M48Z02-150PC1 belongs to the category of non-volatile static random-access memory (NVSRAM).

Use

The M48Z02-150PC1 is primarily used for storing critical data in applications that require non-volatile memory. It combines the benefits of both SRAM and EEPROM, providing fast read/write access along with the ability to retain data even when power is lost.

Characteristics

• Non-volatile: The M48Z02-150PC1 retains data without the need for continuous power supply.
• High-speed operation: It offers fast read and write access times, comparable to traditional SRAM.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.
• High endurance: With a minimum guaranteed 10,000 write cycles, the M48Z02-150PC1 ensures reliable data storage.

Package

The M48Z02-150PC1 comes in a 24-pin DIP (Dual In-line Package) format.

Essence

The essence of M48Z02-150PC1 lies in its ability to provide non-volatile memory storage with high-speed operation and low power consumption.

Packaging/Quantity

The M48Z02-150PC1 is typically packaged in tubes or trays, with a quantity of 25 units per tube/tray.

Specifications

• Memory Size: 2 kilobits (256 bytes)
• Supply Voltage: 4.5V to 5.5V
• Access Time: 150 nanoseconds
• Standby Current: 100 microamps (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The M48Z02-150PC1 has a total of 24 pins, each serving a specific purpose. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A7)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. VCC

Functional Features

• Non-volatile storage: The M48Z02-150PC1 retains data even when power is lost, ensuring data integrity.
• Fast access times: With a 150 nanosecond access time, the device provides quick read and write operations.
• Easy integration: The M48Z02-150PC1 can be easily interfaced with microcontrollers or other digital systems.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention during power loss.
• High-speed operation comparable to traditional SRAM.
• Low power consumption extends battery life in portable devices.
• Easy integration with existing digital systems.

Disadvantages

• Limited storage capacity of 2 kilobits may not be sufficient for certain applications.
• Relatively higher cost compared to standard SRAM.

Working Principles

The M48Z02-150PC1 combines the functionality of SRAM and EEPROM. It utilizes a volatile SRAM array for fast read/write operations and an integrated non-volatile element to retain data during power loss. The non-volatile element is typically based on EEPROM technology, which allows for reliable and long-term data storage.

Detailed Application Field Plans

The M48Z02-150PC1 finds applications in various fields where non-volatile memory storage is required. Some potential application areas include: - Industrial automation systems - Medical equipment - Automotive electronics - Smart meters - Gaming consoles

Detailed and Complete Alternative Models

• M48Z02-150PC6: Similar to M48Z02-150PC1, but with a 600 nanosecond access time.
• M48Z02-150PC3: Similar to M48Z02-150PC1, but with a 300 nanosecond access time.
• M48Z02-150PC10: Similar to M48Z02-150PC1, but with a 1000 nanosecond access time.

These alternative models provide different access times to suit specific application requirements.

In conclusion, the M48Z02-150PC1 is a non-volatile static random-access memory (NVSRAM) device that combines the benefits of SRAM and EEPROM. It offers fast read/write access, low power consumption, and reliable data retention. With its various applications and alternative models, the M48Z02-150PC1 provides a versatile solution for non-volatile memory storage needs.