STMicroelectronics
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STB50NE10T4
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STB50NE10T4

Introduction

The STB50NE10T4 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Semiconductor device
  • Use: Power switching applications
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO-220, D2PAK, or other standard packages
  • Essence: Efficient power management
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 100V
  • Current Rating: 50A
  • On-Resistance: 0.019 ohms
  • Gate Threshold Voltage: 2-4V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The STB50NE10T4 typically has three pins: 1. Gate (G): Input for controlling the switching operation 2. Drain (D): Output terminal for the load 3. Source (S): Common terminal

Functional Features

  • Low On-Resistance: Enables efficient power transfer with minimal losses
  • Fast Switching Speed: Facilitates rapid switching between on and off states
  • High Voltage Capability: Suitable for high voltage applications

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Sensitivity to static electricity
  • Gate drive requirements

Working Principles

The STB50NE10T4 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When the gate voltage is applied, the MOSFET allows the current to pass through, and when the gate voltage is removed, the current flow ceases.

Detailed Application Field Plans

The STB50NE10T4 finds extensive use in various applications, including: - Switched-mode power supplies - Motor control - Inverters - LED lighting - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the STB50NE10T4 include: - IRF540N - FQP30N06L - IRLB8748

In conclusion, the STB50NE10T4 is a versatile power MOSFET with excellent characteristics and functional features, making it suitable for a wide range of power switching applications.

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Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням STB50NE10T4 у технічних рішеннях

  1. What is the maximum drain-source voltage of STB50NE10T4?

    • The maximum drain-source voltage of STB50NE10T4 is 100V.

  2. What is the continuous drain current of STB50NE10T4?

    • The continuous drain current of STB50NE10T4 is 50A.

  3. What is the on-state resistance of STB50NE10T4?

    • The on-state resistance of STB50NE10T4 is typically 0.019 ohms.

  4. What is the gate threshold voltage of STB50NE10T4?

    • The gate threshold voltage of STB50NE10T4 is typically 2-4V.

  5. What are the typical applications for STB50NE10T4?

    • STB50NE10T4 is commonly used in power management, motor control, and DC-DC converters.

  6. What is the operating temperature range of STB50NE10T4?

    • The operating temperature range of STB50NE10T4 is -55°C to 175°C.

  7. Is STB50NE10T4 suitable for high-frequency switching applications?

    • Yes, STB50NE10T4 is suitable for high-frequency switching due to its low on-state resistance.

  8. Does STB50NE10T4 require a heat sink for certain applications?

    • Depending on the application and power dissipation, a heat sink may be required for STB50NE10T4.

  9. What package type does STB50NE10T4 come in?

    • STB50NE10T4 is available in a TO-220 package.

  10. Are there any recommended circuit designs or application notes for using STB50NE10T4?

    • Yes, the manufacturer provides detailed application notes and circuit designs for utilizing STB50NE10T4 in various technical solutions.