STMicroelectronics
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STGW38IH130D
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STGW38IH130D

Product Overview

Category

The STGW38IH130D belongs to the category of power semiconductor devices.

Use

It is used for controlling and switching high-power electrical circuits in various applications.

Characteristics

  • High voltage and current handling capability
  • Low on-state voltage drop
  • Fast switching speed
  • Robust and reliable performance

Package

The STGW38IH130D is typically available in a TO-247 package, which provides efficient thermal dissipation.

Essence

The essence of the STGW38IH130D lies in its ability to efficiently control high-power circuits while minimizing energy losses.

Packaging/Quantity

It is usually packaged individually and comes in standard quantities per package.

Specifications

  • Voltage Rating: 1300V
  • Current Rating: 38A
  • Package Type: TO-247
  • Operating Temperature Range: -40°C to 150°C
  • Gate-Source Threshold Voltage: 2.5V

Detailed Pin Configuration

The STGW38IH130D features a standard pin configuration with gate, source, and drain terminals clearly labeled for easy integration into circuit designs.

Functional Features

  • High voltage and current handling capacity
  • Low conduction losses
  • Fast switching speed
  • Enhanced thermal performance

Advantages

  • Efficient power control
  • Reduced energy losses
  • Suitable for high-power applications
  • Reliable and robust performance

Disadvantages

  • Higher cost compared to lower-rated devices
  • Requires careful thermal management due to high power dissipation

Working Principles

The STGW38IH130D operates based on the principles of field-effect transistor (FET) technology, allowing precise control over the flow of high-power currents through the device.

Detailed Application Field Plans

The STGW38IH130D finds extensive use in various applications, including: - Motor drives - Power supplies - Renewable energy systems - Industrial automation - Electric vehicles

Detailed and Complete Alternative Models

Some alternative models to the STGW38IH130D include: - STGW30NC60WD - IRFP4668PBF - IXFN38N100Q2

In conclusion, the STGW38IH130D is a high-performance power semiconductor device that offers efficient control and switching capabilities for high-power circuits across diverse applications.

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Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням STGW38IH130D у технічних рішеннях

  1. What is STGW38IH130D?

    • STGW38IH130D is a 1300V, 38A IGBT (Insulated Gate Bipolar Transistor) designed for high power switching applications.

  2. What are the key features of STGW38IH130D?

    • The key features include low on-state voltage drop, high switching speed, and integrated diode for freewheeling operation.

  3. What are the typical applications of STGW38IH130D?

    • Typical applications include motor drives, solar inverters, welding equipment, and industrial power supplies.

  4. What is the maximum operating temperature of STGW38IH130D?

    • The maximum operating temperature is typically 150°C.

  5. What is the gate-emitter voltage of STGW38IH130D?

    • The gate-emitter voltage is typically ±20V.

  6. Does STGW38IH130D require an external freewheeling diode?

    • No, STGW38IH130D has an integrated diode for freewheeling operation.

  7. What is the typical collector-emitter saturation voltage of STGW38IH130D?

    • The typical collector-emitter saturation voltage is around 2.3V at 25°C.

  8. Is STGW38IH130D suitable for high-frequency switching applications?

    • Yes, STGW38IH130D is designed for high-speed switching applications.

  9. What are the recommended gate resistor values for driving STGW38IH130D?

    • The recommended gate resistor values are typically in the range of 10-22 ohms.

  10. Does STGW38IH130D have built-in protection features?

    • Yes, STGW38IH130D includes built-in protection against overcurrent and overtemperature conditions.