Toshiba Semiconductor and Storage
Зображення може бути репрезентативним.
Деталі продукту див. у специфікаціях.
SSM6N7002BFE,LM
Переглянути деталі Таблиці даних

SSM6N7002BFE,LM

Product Overview

Category

The SSM6N7002BFE,LM belongs to the category of power MOSFETs.

Use

It is used for switching and amplifying electronic signals in various electronic circuits and applications.

Characteristics

  • Low on-resistance
  • High-speed switching
  • Low gate charge
  • Low thermal resistance

Package

The SSM6N7002BFE,LM is available in a small surface-mount package.

Essence

The essence of this product lies in its ability to efficiently control and amplify electronic signals with minimal power loss.

Packaging/Quantity

The product is typically packaged in reels containing a specific quantity, such as 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 6A
  • Total Gate Charge (Qg): 5.3nC
  • On-Resistance (RDS(on)): 0.05Ω

Detailed Pin Configuration

The SSM6N7002BFE,LM features a standard pin configuration with clearly labeled drain, source, and gate pins.

Functional Features

  • Fast switching speed
  • Low power dissipation
  • High current-carrying capability
  • Enhanced thermal performance

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Reduced heat generation
  • Compact design
  • Reliable performance

Disadvantages

  • Sensitivity to electrostatic discharge
  • Limited voltage handling capacity

Working Principles

The SSM6N7002BFE,LM operates based on the principles of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the application of a voltage to the gate terminal.

Detailed Application Field Plans

This power MOSFET is widely used in various applications, including: - Switching power supplies - Motor control circuits - LED lighting systems - Audio amplifiers - Battery management systems

Detailed and Complete Alternative Models

  • IRF3205
  • FQP30N06L
  • STP55NF06L
  • AOD4184

In conclusion, the SSM6N7002BFE,LM power MOSFET offers efficient and reliable performance in a compact package, making it suitable for a wide range of electronic applications.

[Word count: 330]

Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням SSM6N7002BFE,LM у технічних рішеннях

  1. What is the maximum drain-source voltage for SSM6N7002BFE,LM?

    • The maximum drain-source voltage for SSM6N7002BFE,LM is 60V.

  2. What is the continuous drain current rating for SSM6N7002BFE,LM?

    • The continuous drain current rating for SSM6N7002BFE,LM is 3.7A.

  3. What is the typical threshold voltage for SSM6N7002BFE,LM?

    • The typical threshold voltage for SSM6N7002BFE,LM is 1.5V.

  4. Can SSM6N7002BFE,LM be used in high-frequency applications?

    • Yes, SSM6N7002BFE,LM can be used in high-frequency applications due to its fast switching characteristics.

  5. What is the maximum junction temperature for SSM6N7002BFE,LM?

    • The maximum junction temperature for SSM6N7002BFE,LM is 150°C.

  6. Is SSM6N7002BFE,LM suitable for use in automotive applications?

    • Yes, SSM6N7002BFE,LM is suitable for use in automotive applications due to its robustness and reliability.

  7. What are the typical input and output capacitances for SSM6N7002BFE,LM?

    • The typical input capacitance is 520pF and the typical output capacitance is 110pF for SSM6N7002BFE,LM.

  8. Does SSM6N7002BFE,LM have built-in ESD protection?

    • Yes, SSM6N7002BFE,LM has built-in ESD protection, making it suitable for applications requiring robustness against electrostatic discharge.

  9. What is the typical on-resistance for SSM6N7002BFE,LM?

    • The typical on-resistance for SSM6N7002BFE,LM is 0.07 ohms.

  10. Can SSM6N7002BFE,LM be used in power management applications?

    • Yes, SSM6N7002BFE,LM is suitable for power management applications due to its low on-resistance and high efficiency.