SI2372DS-T1-GE3

Product Overview

Category: Semiconductor
Use: Power MOSFET
Characteristics: High efficiency, low on-resistance
Package: D2PAK
Essence: Advanced power management
Packaging/Quantity: Tape & Reel, 800 units

Specifications

• Voltage - Drain-Source Breakdown (V(BR)DSS): 150V
• Current - Continuous Drain (Id) @ 25°C: 20A
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V
• Input Capacitance (Ciss) @ Vds: 3000pF @ 25V
• Power Dissipation (Max): 2.5W

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• Low gate charge
• Fast switching speed
• Enhanced thermal performance

Advantages and Disadvantages

Advantages: - High efficiency - Low on-resistance - Enhanced thermal performance

Disadvantages: - Sensitive to static electricity - Requires careful handling during installation

Working Principles

The SI2372DS-T1-GE3 operates based on the principles of field-effect transistors, utilizing a voltage-controlled input to regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

1. Power Supplies: Utilized in high-efficiency power supply designs.
2. Motor Control: Enables efficient motor control in various applications.
3. Lighting: Used for LED lighting applications due to its high efficiency.

Detailed and Complete Alternative Models

1. SI2301DS-T1-GE3: Lower voltage variant with similar characteristics.
2. SI2394DS-T1-GE3: Higher voltage variant with comparable features.

This comprehensive entry provides an in-depth understanding of the SI2372DS-T1-GE3, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

Word count: 271