SI3951DV-T1-GE3

Product Overview

Category

The SI3951DV-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

• High efficiency
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The SI3951DV-T1-GE3 is typically available in a compact and industry-standard PowerPAK® SO-8 package.

Essence

The essence of this product lies in its ability to efficiently manage power flow in various electronic systems.

Packaging/Quantity

It is usually supplied in reels with a quantity of 3000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 12A
• RDS(ON) (Max) @ VGS = 10V: 5.5mΩ
• Gate-Source Voltage (VGS) ±20V
• Total Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The SI3951DV-T1-GE3 features the following pin configuration: 1. Gate 2. Source 3. Drain 4. N/C 5. N/C 6. Source 7. Drain 8. N/C

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for improved efficiency
• High current-carrying capability
• Enhanced thermal performance

Advantages and Disadvantages

Advantages

• High efficiency
• Compact package size
• Suitable for high-frequency applications

Disadvantages

• Sensitive to static electricity
• Requires careful handling during assembly

Working Principles

The SI3951DV-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel between the source and drain terminals.

Detailed Application Field Plans

This MOSFET is widely used in various applications including: - Switch mode power supplies - DC-DC converters - Motor control - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SI3951DV-T1-GE3 include: - SI7850DP-T1-GE3 - SI7898DP-T1-GE3 - SI8409DN-T1-GE3

In conclusion, the SI3951DV-T1-GE3 power MOSFET offers high efficiency, fast switching speed, and low on-resistance, making it suitable for a wide range of power management applications.

Word count: 411