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SI4388DY-T1-GE3
Product Overview
Category
The SI4388DY-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and switching circuits.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive requirements
Package
The SI4388DY-T1-GE3 is typically available in a compact and efficient PowerPAK SO-8 package.
Essence
This MOSFET is essential for efficient power control and management in various electronic devices and systems.
Packaging/Quantity
The SI4388DY-T1-GE3 is usually supplied in reels with a quantity of 3000 units per reel.
Specifications
- Drain-Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 9.5A
- RDS(ON) (Max) @ VGS = 10V: 8.5mΩ
- Gate-Source Voltage (Vgs): ±20V
- Total Power Dissipation (PD): 2.5W
Detailed Pin Configuration
The SI4388DY-T1-GE3 follows the standard pin configuration for a PowerPAK SO-8 package: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate
Functional Features
- Low on-state resistance for minimal power loss
- Fast switching speed for efficient operation
- Enhanced thermal performance for reliability
Advantages
- High power handling capability
- Efficient power management
- Compact and space-saving package
Disadvantages
- Sensitive to static electricity
- Requires careful handling during assembly
Working Principles
The SI4388DY-T1-GE3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently regulate power flow in various applications.
Detailed Application Field Plans
The SI4388DY-T1-GE3 is widely used in: - Switching power supplies - Battery management systems - Motor control circuits - LED lighting applications
Detailed and Complete Alternative Models
- SI2301DS-T1-GE3
- SI2333DDS-T1-GE3
- SI2365DST1GE3
- SI2391DST1GE3
In conclusion, the SI4388DY-T1-GE3 power MOSFET offers high-performance power management capabilities in a compact and efficient package, making it an ideal choice for a wide range of applications.
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Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням SI4388DY-T1-GE3 у технічних рішеннях
Sure, here are 10 common questions and answers related to the application of SI4388DY-T1-GE3 in technical solutions:
Q: What is the maximum drain-source voltage for SI4388DY-T1-GE3? A: The maximum drain-source voltage for SI4388DY-T1-GE3 is 30V.
Q: What is the typical on-resistance of SI4388DY-T1-GE3? A: The typical on-resistance of SI4388DY-T1-GE3 is 9.5mΩ at Vgs=10V.
Q: What is the maximum continuous drain current for SI4388DY-T1-GE3? A: The maximum continuous drain current for SI4388DY-T1-GE3 is 75A.
Q: Can SI4388DY-T1-GE3 be used in automotive applications? A: Yes, SI4388DY-T1-GE3 is suitable for automotive applications.
Q: What is the operating temperature range for SI4388DY-T1-GE3? A: The operating temperature range for SI4388DY-T1-GE3 is -55°C to 150°C.
Q: Does SI4388DY-T1-GE3 have built-in ESD protection? A: Yes, SI4388DY-T1-GE3 has built-in ESD protection.
Q: What is the package type of SI4388DY-T1-GE3? A: SI4388DY-T1-GE3 comes in a PowerPAK SO-8 package.
Q: Is SI4388DY-T1-GE3 suitable for high-frequency switching applications? A: Yes, SI4388DY-T1-GE3 is suitable for high-frequency switching applications.
Q: What gate drive voltage is recommended for SI4388DY-T1-GE3? A: A gate drive voltage of 10V is recommended for optimal performance of SI4388DY-T1-GE3.
Q: Can SI4388DY-T1-GE3 be used in power management solutions? A: Yes, SI4388DY-T1-GE3 is commonly used in power management solutions due to its high current handling capability and low on-resistance.