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SI7430DP-T1-GE3

SI7430DP-T1-GE3

Introduction

The SI7430DP-T1-GE3 is a power MOSFET belonging to the category of discrete semiconductor products. This component is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Discrete Semiconductor Product
  • Use: Power MOSFET for electronic applications
  • Characteristics: High efficiency, low on-resistance, fast switching speed
  • Package: DFN (Dual Flat No-Lead)
  • Essence: Efficient power management and control
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on supplier

Specifications

The SI7430DP-T1-GE3 features the following specifications: - Drain-Source Voltage (Vdss): 30V - Continuous Drain Current (Id): 8A - Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V - Gate-Source Voltage (Vgs): ±20V - Input Capacitance (Ciss): 1600pF - Power Dissipation (Pd): 2.5W

Detailed Pin Configuration

The pin configuration of SI7430DP-T1-GE3 is as follows: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source

Functional Features

The functional features of SI7430DP-T1-GE3 include: - High efficiency power management - Fast switching speed for improved performance - Low on-resistance for reduced power loss

Advantages and Disadvantages

Advantages

  • High efficiency
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Sensitive to overvoltage conditions
  • Limited maximum drain-source voltage

Working Principles

The SI7430DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals. By modulating the gate-source voltage, the device can efficiently manage power flow in electronic circuits.

Detailed Application Field Plans

The SI7430DP-T1-GE3 finds extensive application in various fields, including: - Power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

For applications requiring alternative models, the following options can be considered: - SI7469DP-T1-GE3 - SI7456DP-T1-GE3 - SI7483DP-T1-GE3

In conclusion, the SI7430DP-T1-GE3 power MOSFET offers high efficiency and fast switching speed, making it an ideal choice for diverse electronic applications.

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Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням SI7430DP-T1-GE3 у технічних рішеннях

  1. What is the maximum voltage rating of SI7430DP-T1-GE3?

    • The maximum voltage rating of SI7430DP-T1-GE3 is 30V.
  2. What is the typical on-resistance of SI7430DP-T1-GE3?

    • The typical on-resistance of SI7430DP-T1-GE3 is 6.5mΩ.
  3. What is the maximum continuous drain current for SI7430DP-T1-GE3?

    • The maximum continuous drain current for SI7430DP-T1-GE3 is 100A.
  4. What is the gate threshold voltage of SI7430DP-T1-GE3?

    • The gate threshold voltage of SI7430DP-T1-GE3 is typically 1.8V.
  5. What is the operating temperature range for SI7430DP-T1-GE3?

    • The operating temperature range for SI7430DP-T1-GE3 is -55°C to 150°C.
  6. Is SI7430DP-T1-GE3 suitable for automotive applications?

    • Yes, SI7430DP-T1-GE3 is suitable for automotive applications.
  7. Does SI7430DP-T1-GE3 have built-in ESD protection?

    • Yes, SI7430DP-T1-GE3 has built-in ESD protection.
  8. What is the package type of SI7430DP-T1-GE3?

    • SI7430DP-T1-GE3 comes in a PowerPAK® SO-8 package.
  9. Can SI7430DP-T1-GE3 be used in high-frequency switching applications?

    • Yes, SI7430DP-T1-GE3 can be used in high-frequency switching applications.
  10. Is SI7430DP-T1-GE3 RoHS compliant?

    • Yes, SI7430DP-T1-GE3 is RoHS compliant.