SIHP11N80E-GE3

Introduction

The SIHP11N80E-GE3 is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: The SIHP11N80E-GE3 is used as a switching device in power supplies, motor control, and other high voltage applications.
• Characteristics: This MOSFET offers low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The SIHP11N80E-GE3 is typically available in a TO-220AB package.
• Essence: Its essence lies in providing efficient power management and control in various electronic systems.
• Packaging/Quantity: It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

• Voltage Rating: 800V
• Current Rating: 11A
• On-State Resistance: 0.65Ω
• Gate Charge: 22nC
• Operating Temperature: -55°C to 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3

Detailed Pin Configuration

The SIHP11N80E-GE3 features a standard TO-220AB pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low On-State Resistance: Enables efficient power conduction and reduced power dissipation.
• High Switching Speed: Facilitates rapid switching transitions, suitable for high-frequency applications.
• Low Gate Charge: Allows for minimal drive power requirements and improved efficiency.

Advantages and Disadvantages

Advantages

• High Voltage Rating: Suitable for high voltage applications.
• Low Conduction Losses: Enhances overall system efficiency.
• Fast Switching Speed: Enables high-frequency operation.

Disadvantages

• Sensitivity to Overcurrent: Requires robust protection circuitry in high-current applications.
• Gate Drive Complexity: May require careful consideration of gate drive circuit design for optimal performance.

Working Principles

The SIHP11N80E-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET enters the conducting state, allowing current to flow through.

Detailed Application Field Plans

The SIHP11N80E-GE3 finds extensive application in the following areas: - Switched-Mode Power Supplies (SMPS) - Motor Control Systems - Inverters and Converters - Electronic Ballasts - Industrial and Automotive Electronics

Detailed and Complete Alternative Models

• Alternative Model 1: IRFP4668PBF
  • Voltage Rating: 800V
  • Current Rating: 14A
  • Package: TO-247AC
• Alternative Model 2: FDPF18N50T
  • Voltage Rating: 500V
  • Current Rating: 18A
  • Package: TO-220F

In conclusion, the SIHP11N80E-GE3 power MOSFET serves as a crucial component in various electronic systems, offering high voltage capability, low on-state resistance, and fast switching characteristics. Its application spans across diverse industries, contributing to efficient power management and control.

Word Count: 470