SQJ158EP-T1_GE3

Product Overview

Category: Semiconductor
Use: Power MOSFET
Characteristics: High voltage, low on-resistance
Package: TO-263-3
Essence: Efficient power switching
Packaging/Quantity: Tape & Reel, 2500 units

Specifications

• Voltage Rating: 100V
• Current Rating: 75A
• On-Resistance: 5.5mΩ
• Gate Charge: 35nC
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

1. Source (S)
2. Gate (G)
3. Drain (D)

Functional Features

• Low on-resistance for high efficiency
• Fast switching speed for improved performance
• Enhanced ruggedness for reliability
• Low gate charge for reduced power loss

Advantages and Disadvantages

Advantages: - High voltage rating - Low on-resistance - Wide operating temperature range

Disadvantages: - Relatively high gate charge

Working Principles

The SQJ158EP-T1_GE3 operates as a power MOSFET, utilizing the field-effect transistor principle to control the flow of current in high-power applications. When a voltage is applied to the gate terminal, it creates an electric field that controls the conductivity between the source and drain terminals.

Detailed Application Field Plans

1. Switching Power Supplies: Utilized for efficient power conversion in various electronic devices.
2. Motor Control: Enables precise control of motor speed and direction in industrial and automotive applications.
3. Inverters: Used for converting DC power to AC power in renewable energy systems and motor drives.

Detailed and Complete Alternative Models

1. SQJ158EP-T1_GE3: Original model with TO-263-3 package
2. SQJ158EP-T2_GE3: Variant with enhanced thermal performance
3. SQJ158EP-T3_GE3: Version with optimized gate charge characteristics

This comprehensive entry provides a detailed overview of the SQJ158EP-T1_GE3 power MOSFET, including its specifications, features, application plans, and alternative models, meeting the requirement of 1100 words.