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SQJ464EP-T1_GE3

SQJ464EP-T1_GE3

Product Category:
The SQJ464EP-T1_GE3 belongs to the category of power MOSFETs.

Basic Information Overview:
- Category: Power MOSFET - Use: The SQJ464EP-T1GE3 is designed for use in power management applications, such as voltage regulation and power switching. - Characteristics: It features low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion. - Package: The device is available in a compact and thermally efficient PowerPAK® SO-8 package. - Essence: The essence of the SQJ464EP-T1GE3 lies in its ability to provide efficient power management solutions with minimal heat dissipation. - Packaging/Quantity: The product is typically packaged in reels containing a specific quantity, usually 3000 units per reel.

Specifications:
The specifications of the SQJ464EP-T1_GE3 include: - Drain-Source Voltage (VDS): 30V - Continuous Drain Current (ID): 75A - On-State Resistance (RDS(ON)): 1.4mΩ - Gate-Source Voltage (VGS): ±20V - Total Gate Charge (Qg): 22nC

Detailed Pin Configuration:
The SQJ464EP-T1_GE3 features a standard SO-8 pin configuration, with the following pinout: 1. Gate (G) 2. Source (S) 3. Source (S) 4. Drain (D) 5. Drain (D) 6. Source (S) 7. Source (S) 8. Gate (G)

Functional Features:
The functional features of the SQJ464EP-T1_GE3 include: - High efficiency due to low on-state resistance - Fast switching speed for improved power management - Low gate charge for reduced drive requirements - Enhanced thermal performance in the PowerPAK® SO-8 package

Advantages and Disadvantages:
Advantages: - High efficiency and power density - Reduced heat dissipation - Fast response time - Compact package size

Disadvantages: - Sensitive to overvoltage conditions - Limited maximum drain-source voltage

Working Principles:
The SQJ464EP-T1_GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material, thereby regulating the flow of current between the drain and source terminals.

Detailed Application Field Plans:
The SQJ464EP-T1_GE3 is well-suited for various power management applications, including: - DC-DC converters - Motor control - Battery management systems - LED lighting - Power supplies

Detailed and Complete Alternative Models:
Some alternative models to the SQJ464EP-T1_GE3 include: - IRF3205 - FDP8870 - AUIRF3710

This comprehensive range of alternative models provides flexibility in selecting the most suitable power MOSFET for specific application requirements.

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Перелічіть 10 типових запитань і відповідей, пов’язаних із застосуванням SQJ464EP-T1_GE3 у технічних рішеннях

  1. What is the maximum voltage rating of SQJ464EP-T1_GE3?

    • The maximum voltage rating of SQJ464EP-T1_GE3 is 30V.
  2. What is the typical on-resistance of SQJ464EP-T1_GE3?

    • The typical on-resistance of SQJ464EP-T1_GE3 is 6.5mΩ.
  3. What is the maximum continuous drain current of SQJ464EP-T1_GE3?

    • The maximum continuous drain current of SQJ464EP-T1_GE3 is 120A.
  4. What is the operating temperature range of SQJ464EP-T1_GE3?

    • The operating temperature range of SQJ464EP-T1_GE3 is -55°C to 150°C.
  5. Is SQJ464EP-T1_GE3 suitable for automotive applications?

    • Yes, SQJ464EP-T1_GE3 is suitable for automotive applications.
  6. Does SQJ464EP-T1_GE3 have overcurrent protection?

    • Yes, SQJ464EP-T1_GE3 features overcurrent protection.
  7. What is the package type of SQJ464EP-T1_GE3?

    • SQJ464EP-T1_GE3 comes in a PowerPAK® SO-8 package.
  8. Can SQJ464EP-T1_GE3 be used in power management solutions?

    • Yes, SQJ464EP-T1_GE3 is commonly used in power management solutions.
  9. What are the typical applications of SQJ464EP-T1_GE3?

    • Typical applications of SQJ464EP-T1_GE3 include load switching, power distribution, and battery protection.
  10. Is SQJ464EP-T1_GE3 RoHS compliant?

    • Yes, SQJ464EP-T1_GE3 is RoHS compliant.