SUM60030E-GE3

Product Overview

Category: Semiconductor
Use: Power Management
Characteristics: High efficiency, low power consumption
Package: TO-263
Essence: MOSFET
Packaging/Quantity: Tape & Reel / 2500 units per reel

Specifications

• Voltage Rating: 100V
• Current Rating: 60A
• RDS(ON): 6.5mΩ
• Gate Charge: 40nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• High efficiency due to low RDS(ON)
• Fast switching speed
• Low gate charge for reduced power loss

Advantages and Disadvantages

Advantages: - High efficiency - Low power consumption - Fast switching speed

Disadvantages: - Sensitive to voltage spikes - Higher cost compared to traditional MOSFETs

Working Principles

The SUM60030E-GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the current flow between the drain and source terminals.

Detailed Application Field Plans

1. Power Supplies: Used in high-efficiency power supply designs.
2. Motor Control: Enables efficient motor control in various applications.
3. Inverters: Utilized in inverters for renewable energy systems.

Detailed and Complete Alternative Models

1. SUM60030E-GE4: Similar specifications with minor improvements.
2. IRF3205: Lower cost alternative with slightly higher RDS(ON).

This comprehensive entry provides a detailed overview of the SUM60030E-GE3 semiconductor, covering its basic information, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.