onsemi (Ansemi)
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NCP5109BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V

NCP5109BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V
Номер деталі
NCP5109BDR2G
Категорія
Power Chip > Gate Driver IC
Виробник/бренд
onsemi (Ansemi)
Інкапсуляція
SOIC-8
Упаковка
taping
Кількість упаковок
2500
опис
The NCP5109 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
Запит пропозиції
Заповніть усі обов’язкові поля та натисніть «НАДІСЛАТИ», ми зв’яжемося з вами електронною поштою протягом 12 годин. Якщо у вас виникнуть проблеми, залиште повідомлення або електронну пошту [email protected], ми відповімо якомога швидше.
В наявності 81488 PCS
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Ключові слова NCP5109BDR2G
NCP5109BDR2G Електронні компоненти
NCP5109BDR2G Продажі
NCP5109BDR2G Постачальник
NCP5109BDR2G Дистриб'ютор
NCP5109BDR2G Таблиця даних
NCP5109BDR2G Фотографії
NCP5109BDR2G Ціна
NCP5109BDR2G Пропозиція
NCP5109BDR2G Найнижча ціна
NCP5109BDR2G Пошук
NCP5109BDR2G Закупівля
NCP5109BDR2G Чіп