Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Виробники
ST (STMicroelectronics)
Виробники
APM (Jonway Microelectronics)
Виробники
Prisemi (core guide)
Виробники
N-channel, 40V, 180mA, 7.5Ω@10V
опис
LRC (Leshan Radio)
Виробники
VBsemi (Wei Bi)
Виробники
ST (STMicroelectronics)
Виробники
onsemi (Ansemi)
Виробники
This N-channel PowerTrench MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance.
опис
VBsemi (Wei Bi)
Виробники
VBsemi (Wei Bi)
Виробники
DIODES (US and Taiwan)
Виробники
SILAN (Silan Micro)
Виробники
CJ (Jiangsu Changdian/Changjing)
Виробники
onsemi (Ansemi)
Виробники
This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
опис
ST (STMicroelectronics)
Виробники
JESTEK (JESTEK)
Виробники
VBsemi (Wei Bi)
Виробники