onsemi (Ansemi)
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NSS40301MDR2G 2 NPN 40V 3A low saturation voltage transistors, dual NPN, 40 V, 6.0 A

NSS40301MDR2G

2 NPN 40V 3A low saturation voltage transistors, dual NPN, 40 V, 6.0 A
Номер деталі
NSS40301MDR2G
Категорія
Triode/MOS Tube/Transistor > Triode(BJT)
Виробник/бренд
onsemi (Ansemi)
Інкапсуляція
SOIC-8
Упаковка
taping
Кількість упаковок
2500
опис
ON Semiconductor's e2 PowerEdge Series Low Saturation Voltage Bipolar Transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control. Typical applications are DC-DC converters and power management in portable and battery-operated products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
Запит пропозиції
Заповніть усі обов’язкові поля та натисніть «НАДІСЛАТИ», ми зв’яжемося з вами електронною поштою протягом 12 годин. Якщо у вас виникнуть проблеми, залиште повідомлення або електронну пошту [email protected], ми відповімо якомога швидше.
В наявності 86967 PCS
Контактна інформація
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Ключові слова NSS40301MDR2G
NSS40301MDR2G Електронні компоненти
NSS40301MDR2G Продажі
NSS40301MDR2G Постачальник
NSS40301MDR2G Дистриб'ютор
NSS40301MDR2G Таблиця даних
NSS40301MDR2G Фотографії
NSS40301MDR2G Ціна
NSS40301MDR2G Пропозиція
NSS40301MDR2G Найнижча ціна
NSS40301MDR2G Пошук
NSS40301MDR2G Закупівля
NSS40301MDR2G Чіп